• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    An apparatus (1) for metallizing wafers (11), in particular microchip wafers, in an electrolyte consists of a plurality of holding devices (3), each holding device (3) having a space (27) for the electrolyte which is separated from the receiving spaces (27). for electrolyte in other holding devices (3) is separated, and wherein each wafer (11) serving as a cathode ring (15) and an anode network (29) is assigned as an anode.
    公开号:AT510593A4
    申请号:T2075/2010
    申请日:2010-12-15
    公开日:2012-05-15
    发明作者:Markus Dipl Ing Dr Hacksteiner
    申请人:Markus Dipl Ing Dr Hacksteiner；
    IPC主号:
    专利说明:

    + 43_1_52 £, 4245 PATENT APP. BEER & PARTN x '•' φ «e ···· ···· ♦ · *. · '·· ♦ Φ m • · "·" "t * • · · · · · · · · ♦ ♦ · is · # · ♦ * ·» · · # + "φ ··· * 3.19 5/12/2010 10:35
    L - 1 -
    The invention relates to a device for metallizing wafers having the features of the introductory part of claim 1.
    Electrolytic metallization of wafers, particularly micro-chip wafers (e.g., copper), is known in the art. The known metallization is done in single wafer mode, which means that for each process and process chamber a single wafer is processed, i. is metallized. Usually, the wafer to be metallized (e.g., a micro-chip wafer) is immersed with its face down in an electrolyte. During the process (metallization) electrolyte is constantly laminar and parallel to the wafer surface 10 in flow. In order to adjust and maintain this flow state, increased attention is required and expensive devices are required.
    A disadvantage of the known procedure is that the metallization is very expensive because of long Pnozesszeiten (many minutes to hours), since only one wafer per Pro-15 zess and process chamber can be driven. The larger the structures on the surface of the microchip wafer that need to be filled with metal, the longer the process times.
    In view of the fact that microchips are expected to become increasingly vertically integrated (several microchip layers on top of each other that have to be contacted with each other), the filling of wide and deep channels (so-called through silicon vias), which are in the finished microchip as vertical interconnects serve, with an electrically conductive metal, eg Copper, required. These channels may have widths of several microns and depths of up to 100 microns and more. 25
    The invention is based on the object to provide a device of the type mentioned, with which the metallization of wafers, especially microchip wafers, in batch mode with good success is possible. This object is achieved with a device having the features of claim 1.
    Preferred and advantageous embodiments of the devices according to the invention are the subject of the dependent claims. 35
    An advantage of the device according to the invention is the small space requirement per wafer to be metallized, in particular microchip wafers. Thus, only a small amount of electrolyte is required per wafer, which is the case in particular when a closed electrolyte volume is present for each wafer with the device according to the invention. 40 15/12/2010 10:39 + 43-1-5264245 .. • ♦ • · · ··· · · PATENT APPLICATIONS • IM * I * I * ft * ftftftftftftftftftftftftftftftft , 04/19 - 2 -
    The device according to the invention, which has at least one, but preferably a plurality of hatching devices for simultaneously metallizing a plurality of wafers (microchip wafers), can be immersed as an "open batch", ie with an open electrolyte space, in an electrolysis bath with the wafer front facing upwards and then it is at least partially collapsed (to save space) or the jigs are completely closed ("closed batch").
    In the device according to the invention, it is also possible to close the holding devices for the individual wafers from the beginning and to fill each of the spaces provided for in the holding devices 10 for electrolyte via feed lines and outlets with electrolyte.
    When the device according to the invention is used as a "closed batch", the space that is available for each wafer for the electrolyte, through the wafer, the frame and the upper end plate, which may be a BasispJatte another
    Holding device is defined.
    In the context of the invention it can be provided that the device according to the invention is set into oscillation with the aid of an eccentric, so that a vibrating electrolyte body results. The frequency can be set fixed or selected variable or random variable.
    When the device according to the invention is immersed in an electrolytic bath with the wafer front facing up, it is preferred that the individual holding devices are not pushed together so that the electrolyte can flow out of the bath between the holding devices and gas can escape. Once the inventive device is positioned in the electrolyte, the holding devices for the wafers may be partially or totally collapsed when a "closed batch" is used. is used. When working with the device according to the invention with "closed batch", resulting from the closed electrolyte body depletion of metal ions during the metallization process. This can be compensated by a corresponding process control. The device according to the invention allows a process control which enables electrolytic metallization of large microchip structures in batch operation with minimal space requirements. This can save costs.
    Further details and features of the invention will become apparent from the following description of a preferred embodiment. 15/12/2010 10:39 + 43-1-52S4245 .. PATENT ANW.BEER & PARTN S. 05/19
    «« * · »» · + * «I · · · · · · · · · · · · · · · · · · ·
    2 shows a section of a part of the holding device, FIG. 3 shows a Haiteeinrichtung (without upper end plate) in an oblique view, Figure 4 shows a base plate with anode network seen from below, 5 shows a clamping body in an oblique view, FIG. 6 shows a device according to the invention with a plurality of holding devices "open". and FIG. 7 shows the device from FIG. 6 with closed holding devices.
    An inventive device 1 has one or more, in the embodiment shown in the drawings four, holding devices 3. 10
    Each of the holding devices 3 has, as shown particularly in FIGS. 1 and 2, the following parts:
    A base plate 5 made of electrically insulating material, on whose top side 7 a kreisför-15 mige recess 9 (recess) is provided, in which a wafer to be treated 11, in particular a microchip wafer, can be inserted, wherein the front side 13, so the side, in which the channels to be filled by electrolytic metallization in an electrolyte with metal, such as copper, are present, facing upward. On the edge region of the wafer 11, a serving as a cathode ring 15 is placed from electrically conductive material, which can be connected via a lug 17 to a voltage source to pole the wafer 11 as a cathode. Within the ring 15, which serves as a cathode to connect the wafer 11 in the sense of polarity as a cathode with the negative Poi of a voltage source, an annular seal 10, in particular 25 an O-ring, inserted.
    Above the described arrangement of the base plate 5, wafer 11, ring 15 (cathode) and sealing ring 19, a frame 21 of electrically insulating material is placed, in which a recess 23 which defines the space 27 for electrolyte laterally, 30 is provided. The frame 21 has, for example, a height of not more than 20 mm.
    On the frame 21 of insulating material with its recess 23 is placed around the recess 23 an annular seal 25, for example, an O-ring. The seal 25 can also be received in an annular groove in the frame 21 (see Fig. 35 Fig. 2).
    In order to complete the holding device 3, wind on the seal 25 on the frame 21, an upper end plate, which may be a base plate 5 of another holding device 3, placed. 40 PATENTANW.BEER & PARTN Ξ. • ·· «····· ··. »· · · · · · · · · · · · · · 4 · 4 · 4 ·· · * * * 4 · s 06/19 15/12/2010 10:39 + 43-1-5264245 .. • · »» m · · · · + - 4 -
    As shown in FIG. 2, through the frame 21, through the wafer 11 and through the upper end plate, which may in particular be the base plate 5 of another holding device 3, the space 27 is defined, which is filled with electrolyte for the electrolytic metallization of the wafer 11 becomes. 5
    The holding device 3 may (not shown) be associated with a device for heating / cooling, urri hold the holding device 3 at the respectively required temperature (to temper). 10, it is provided that the upper end plate, which may be the base plate 5 of a further holding device 3, carries on its lower side an anode net 29 (see FIG is equipped to connect the anode network 29 at the bottom of the end plate (base plate 5) with the positive pole of a voltage source, 15
    To compensate for the voltage drop from the outer edge of the wafer 11 to the center of the wafer 11, the underside of the base plate 5 may be convex with the anode mesh 29. In addition or as an alternative, the density of the conductors forming the anode network 29 may increase towards the center of the anode network 29. The anode network 29 is thus woven closer to the center.
    In the exemplary embodiment shown, it is considered that in the device 1 according to the invention, several holding devices 3 are provided one above the other. Therefore, it is preferable that the upper end plate of holding devices 3 is formed by the base plate 5 (with anode plate 29) of the next upper holding device 3, as in the embodiment shown in the drawings (Figs. 6 and 7).
    To press the base plate 5 (" anode plate ") to the frame 21 (" cathode frame "), both made of insulating material, to join them together liquid-tightly, are at the lateral edges of the base plate 5 and the frame 21 outwardly facing projections 33 (tongues), which taper in a wedge shape to both sides, provided, which clamping body 35 are assigned. The clamping body 35 have on its base plate 5 and the frame 21 facing side a groove 37 which bifurcates in-shaped into two branches 39 (see Fig .. 5). In the open position, the tongues 33 of the base plate 5 and the frame 21 are provided in the branches 39 of the groove 37, so that the base plate 5 is spaced from the frame 21. By moving the clamping body 35 in a plane parallel to the plane of the base plate 5 and the frame 21, said components (base plate 5 and 40 frame 21) of the holding device 3 according to the invention can be pressed against each other. 15/12/2010 10:39 + 43-1-5264245 .. • · * 4 4 4 • · * ·
    - ... PATENT APPLICATION • ••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• 07/19 - 5 -
    This position of use of base plate 5 and frame 21 of the holding device 3 is shown in Fig. 2 and in Fig. 3. The devices with which the clamping bodies 35 are adjusted along the guide rods 41, i. are approximated to bring together the individual holding devices 3 are not dargesteilt.
    Fig. 5 shows a clamping body 35 on an enlarged scale and the groove 37 which divides Y-shaped into two branches 39. FIG. 6 shows a device 1 according to the invention with a plurality of hooking devices 3 in the open state ("open batch"), but without "top" finishing plate on the topmost retaining device 3. The Ktemmkörper 35 are adjustably guided on the level of the holding means 3 vertically oriented guide rods 41, wherein the guide rods 41 by means not shown transverse to its longitudinal extent, ie, in a direction parallel to the plane of the holding means 3, can be adjusted to the respective Holding devices 3 via the clamp body 35 to open or close.
    In each holding device 3 is between the base plate 5 and frame 21 to be treated (metallizing) wafer 11 (microchip), for example, using a wafer 11 20 usual handling device (gripper) inserted so that it in the receptacle 9 in the lower Baslsplatte 5 Anode plate) comes to rest with its front side up. In principle, it is possible to carry out the metallization when the device 1 assumes a position ("open batch") according to FIG. 6, a common electrolyte being seen for treating all wafers 11 provided in the individual holding devices 3.
    6 and 7 also show that the tongues 33 and the clamping bodies 35 of successive (adjacent) holding devices 3 are arranged offset from each other, so that the holding devices 3 from the shown in Fig. 6, spaced-apart layer (open batch 30) in the abutting position shown in Fig. 7 (closed batch) can be adjusted without the clamp body 35 hinder or prevent this movement.
    Advantageously, it is provided in the context of the invention that the Haiteeinrichtungen 3 of 35 inventive device 1, as shown in Fig. 7, by adjusting the clamping body 35 along the guide rods 41 are approximated to each other, so that the frame 21 of each holding device 3 with the base plate 5 of the next upper Halteein-direction 3 comes into abutment (sealed by the sealing ring 25). Thus, the base plates 5 of the respective upper holding device 3 simultaneously form the end plate of the next lower holding device 3 ("closed batch"). In this case, every 15/12/2010 10:39 + 43-1-5264245, 1 * · »PATENT APP. BEER & PARTN • • I * »* ·· t« t • »ft 4 4 * ·« «4 • 4 4444 4 I · ·» * 4 • I 44 4 4 * 44 p. 08/19 - 6 - direction 3, which is filled with Elektroiyt shown in Fig. 2, so that for the metallization of a microchip wafer 11 by electrolysis, a predetermined volume of electrolyte is available. The spaces 27 of the holding devices 3 provided for receiving the electrolyte can be filled / emptied independently of one another via supply lines 5 and the outlets. This results in the advantages described in the introduction. The devices with which a plurality of holding devices 3 arranged one above the other are pressed against each other by adjusting the clamping bodies 35 along the guide rods 41 (position according to FIG. 7) are not shown. In order to assist the electrolysis and thus the metallization of the wafers, in particular when the device 1 according to the invention is used with closely spaced holding devices 3 according to FIG. 7 ("closed batch"), the device 1 can be oscillated overall, while the device 1 can be vibrated Electrolysis is performed. For this purpose, in the exemplary embodiment shown (FIGS. 6 and 7) with at least one of the guide rods 41, a motor 43 is connected to an eccentric so that a vibrating electrolyte body results. The frequency can be set fixed or selected variable or random variable.
    In summary, an embodiment of the invention may be described as follows: 20
    An apparatus 1 for metallizing wafers 11, in particular microchip wafers, in an electrolyte consists of a plurality of holding devices 3, each holding device 3 having a space 27 for the electrolyte, which is separated from the receiving spaces 27 for electrolyte in other holding devices 3, and wherein each Wafer 11 is assigned as a cathode 25 serving ring 15 and an anode network 29 as an anode.
    权利要求:
    Claims (11)
    [1]
    10:39 + 43-1-5264245.,. .... fATENJANW.BEER & PARTN p. 09/19 • * * * * * · · · · * * * * * * * * * i * * * * * ··· * «ff · # Mt * · »· ·» * «| 1. Apparatus (1) for electrolytically metallizing wafers, in particular micro-chip wafers (11), in an electrolyte, in particular to fill channels in microchip wafers with metal, in particular copper, with a space (27) for the inclusion of the electrolyte, with an anode (29), with a contact (15) in order to polish the wafer (11) to be metallized as a cathode, characterized in that at least one holding device (3) for the wafer to be metallized (11) is provided that the holding device (3) comprises - a base plate (5) made of electrically insulating material with a receiving area (9) for the wafer (11), - a frame (21) made of insulating material having a recess (23) forming the space (27) for electrolyte, - a ring (15) of electrically conductive material serving as a cathode, - a side of the frame (21) facing away from the base plate (5), covering the space (27) for electrolyte Statements and and an anode network (29) disposed on the side of the end plate facing the wafer (11), and in that means are provided for holding the base plate (5) in abutment with the frame (21).
    [2]
    2. Apparatus according to claim 1, characterized in that between the base plate (5) and the frame (21) is provided a seal (19).
    [3]
    3. A device according to claim 2, characterized in that the seal (19) is arranged within the serving as a cathode ring (15).
    [4]
    4. Apparatus according to claim 2 or 3, characterized in that the seal (19) is a ring seal.
    [5]
    5. Device according to one of claims 2 to 4, characterized in that the seal (19) between the frame (21) and on the base plate (5) resting wafer (11) is clamped.
    [6]
    6. Device according to one of claims 1 to 5, characterized in that the receiving area for the wafer to be metallized (11) in the base plate (5) is a recess (9).
    [7]
    7. Device according to one of claims 1 to 6, characterized in that one above the other several holding devices (3) are provided and that the base plate 15/12/2010 10:39 + 43-1-525424¾. 1 · PATENTANW.BEER & PARTN p. 10/19 • «* · 4 4 4 I 4 4 4 • Φ * · · ♦ ···« 4 »♦» * «« ** »4 · #

    (5) forms the end plate of each below arranged holding device (3). 8. Device according to one of claims 1 to 7, characterized in that on the base plate (5) and on the frame (21) outwardly facing, preferably wedge-shaped, projections (33) are provided, to which the means (35) for Press against each other base plate (5) and frame (21) attack. A device according to claim 8, characterized in that the means are clamping bodies (35) having grooves (37, 39) in which the projections (33) on the base plate (5) and on the frame (21) engage. 10. The device according to claim 9, characterized in that the grooves (37) V-shaped in two branches (39) share. 11. The device according to claim 8 or 9, characterized in that the clamping body (35) on guide rods (41) perpendicular to the plane of the base plate (5) and frame (21) are displaceably guided. 12. Device according to one of claims 9 to 11, characterized in that the clamping bodies (35) for moving Basispiatte (5) and frame (21) towards each other or away from each other parallel to the plane of the frame (21) or the base plate (5) are adjustable. 13. Device according to one of claims 1 to 12, characterized in that arrangements of a Basispiatte (5) and a frame (21) from a position in which they are spaced from each other, in a position in which they appeal to one another , are adjustable. 14. The apparatus according to claim 13, characterized in that between the arrangements seals (25), in particular ring seals, are provided, which are arranged between a frame (21) and serving as an end plate base plate (5) of an overlying arrangement. 15. Device according to one of claims 1 to 14, characterized in that the Haiteeinrichtung (3) or the holding means (3) is assigned at least one vibration generator (43). 16 .. Apparatus according to claim 15, characterized in that the vibration generator (43) is a vibration generator for generating vibrations with fixed, 40 15/12/2010 10:39 + 43-1-520424¾. ≫ ^ · · PATENTANW.BEER & PARTN p. 11/13 • ·

    • · · · · · · · · ······················

    - 9 - is chosen-variable or random-variable frequency.
    [8]
    17. Device according to one of claims 1 to 16, characterized in that the holding device (3) is temperature-controlled. 6
    [9]
    18. Device according to one of claims 1 to 17, characterized in that in several holding devices (3) cfie closed spaces (27) for electrolyte independently of each other with electrolyte fillable and be entieerbar.
    [10]
    19. Device according to one of claims 1 to 18, characterized in that the anode mesh is woven increasingly narrow towards the center.
    [11]
    20. Device according to one of claims 1 to 19, characterized in that the wafer (11) facing away from the surface of the base plate (5) is convex.
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    引用文献:
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    法律状态:
    2013-09-15| PC| Change of the owner|Owner name: MTI GMBH, AT Effective date: 20130807 |
    2018-08-15| MM01| Lapse because of not paying annual fees|Effective date: 20171215 |
    优先权:
    申请号 | 申请日 | 专利标题
    ATA2075/2010A|AT510593B1|2010-12-15|2010-12-15|DEVICE FOR METALLIZING WAFERS|ATA2075/2010A| AT510593B1|2010-12-15|2010-12-15|DEVICE FOR METALLIZING WAFERS|
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    JP2013543464A| JP5969498B2|2010-12-15|2011-12-12|Devices and methods for metallizing wafers|
    PCT/AT2011/000492| WO2012079101A1|2010-12-15|2011-12-12|Device and method for metallizing wafers|
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